100 mm 4HN-SiC Wafers with Zero Micropipe Density

被引：51

作者：

Leonard, R. T. ^{[1
]}

Khlebnikov, Y. ^{[1
]}

Powell, A. R. ^{[1
]}

Basceri, C. ^{[1
]}

Brady, M. F. ^{[1
]}

Khlebnikov, I. ^{[1
]}

Jenny, J. R. ^{[1
]}

Malta, D. P. ^{[1
]}

Paisley, M. J. ^{[1
]}

Tsvetkov, V. F. ^{[1
]}

Zilli, R. ^{[1
]}

Deyneka, E. ^{[1
]}

Hobgood, H. McD. ^{[1
]}

Balakrishna, V. ^{[1
]}

Carter, C. H., Jr. ^{[1
]}

机构：

[1] Cree Inc, Durham, NC 27703 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

4HN-SiC; silicon carbide; SiC; PVT; seeded sublimation; crystal; substrate; wafer; diameter; micropipe; dislocation; defects; SINGLE-CRYSTAL;

D O I：

10.4028/www.scientific.net/MSF.600-603.7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Recent advances in PVT c-axis growth process have shown a path for eliminating micropipes in 4HN-SiC, leading to the demonstration of zero micropipe density 100 mm 4HN-SiC wafers. Combined techniques of KOH etching and cross-polarizer inspections were used to confirm the absence of micropipes. Crystal growth studies for 3-inch material with similar processes have 2 demonstrated a 1c screw dislocation median density of 175 cm(-2), compared to typical densities of 2x10(3) to 4x10(3) cm(-2) in current production wafers. These values were obtained through optical scanning analyzer methods and verified by x-ray topography.

引用

页码：7 / 10

页数：4

共 33 条

[21] Epitaxial growth of 3C-SiC films on 4-inch diameter (100)silicon wafers by APCVD
Fleischman, AJ
Zorman, CA
Mehregany, M
Jacob, C
Nishino, S
Pirouz, P
SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 197 - 200
[22] C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput
Nishio, J.
Kudou, C.
Tamura, K.
Masumoto, K.
Kojima, K.
Ohno, T.
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 109 - +
[23] Development of n-type epitaxial growth on 200 mm 4H-SiC wafers for the next generation of power devices
Musolino, Mattia
Carria, Egidio
Crippa, Danilo
Preti, Silvio
Azadmand, Mani
Mauceri, Marco
Isacson, Mathias
Calabretta, Michele
Messina, Angelo
MICROELECTRONIC ENGINEERING, 2023, 274
[24] Development and investigation on EBAS-100 of 100 mm diameter wafer for 4H-SiC post ion implantation annealing
Shibagaki, Masami
Satoh, Masataka
Kurematsu, Yasumi
Numajiri, Kenji
Watanabe, Fumio
Haga, Shigetaka
Miura, Kuniaki
Suzuki, Tomoyuki
Miyagawa, Shingo
SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 807 - 810
[25] 10 x 100 mm 4H-SiC Epitaxial Growth by Warm-wall Planetary Reactor
Dong, Lin
Sun, Guosheng
Yu, Jun
Yan, Guoguo
Zhao, Wanshun
Wang, Lei
Zhang, Xinhe
Li, Xiguang
Wang, Zhanguo
SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 239 - +
[26] 4H-SIC MESFET WITH 2.8-W/MM POWER-DENSITY AT 1.8-GHZ
WEITZEL, CE
PALMOUR, JW
CARTER, CH
NORDQUIST, KJ
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (10) : 406 - 408
[27] 基于正交实验的100mm 4°偏轴SiC衬底外延均匀性研究
李赟
赵志飞
陆东赛
朱志明
李忠辉
人工晶体学报, 2014, 43 (10) : 2699 - 2704
[28] High Uniformity with Reduced Surface Roughness of Chloride based CVD process on 100mm 4° off-axis 4H-SiC
Das, Hrishikesh
Sunkari, Swapna
Oldham, Timothy
Casady, Janna
Casady, Jeff
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 93 - 96
[29] Uniformity and Morphology of 10 x 100mm 4° off-axis 4H-SiC epitaxial layers and their effect on device performance
Das, Hrishikesh
Sunkari, Swapna
Oldham, Timothy
Rodgers, Josh
Casady, Janna
SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 221 - 224
[30] Epitaxial growth of 3C-SiC films on 4-inch diameter (100) silicon wafers by atmospheric-pressure chemical vapor deposition
Zorman, C
Fleischman, A
Mehregany, M
Jacob, C
Pirouz, P
PROCESSING AND FABRICATION OF ADVANCED MATERIALS IV, 1996, : 317 - 322

← 1 2 3 4 →