Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process

被引：21
|
作者：
Mohit [1 ]
Murakami, Tatsuya [1 ]
Haga, Ken-ichi [1 ]
Tokumitsu, Eisuke [1 ]
机构：
[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231211, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / SP期
关键词：
ferroelectric HZO; solution process; vacuum annealing; HfO2; CHEMICAL SOLUTION DEPOSITION; CRYSTAL-STRUCTURE; FERROELECTRICITY; OXIDE;
D O I：
10.35848/1347-4065/aba50b
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ferroelectric yttrium-doped hafnium zirconium dioxide (Y-HZO) was fabricated on Pt/Ti/SiO2/Si substrate by the solution process under various annealing environments. A metal-ferroelectric-metal structure with Pt as the top electrode was fabricated and characterized. Samples annealed at 600-800 degrees C in a vacuum environment showed ferroelectricity, which was confirmed by the polarization-electric field and capacitance-voltage measurements. The ferroelectric properties were dramatically improved when samples were annealed in a vacuum at 800 degrees C due to the decrease in leakage current compared to the Y-HZO films annealed at 800 degrees C in oxygen and nitrogen.
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页数：9
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