Raman scattering characterization of ion-beam synthesized Mg2Si, 2 -: On the orientational growth of Mg2Si phase in (001) and (111) Si substrates

被引：8
|
作者：
Zlateva, G
Atanassov, A
Baleva, M
Nicolova, L
机构：
[1] Univ Sofia, Fac Phys, Sofia 1164, Bulgaria
[2] Med Univ, Dept Phys & Biophys, Sofia 1431, Bulgaria
[3] Tech Univ Sofia, Dept Appl Phys, Sofia 1000, Bulgaria
来源：
PLASMA PROCESSES AND POLYMERS | 2006年 / 3卷 / 02期
关键词：
ion implantation; light scattering; Mg2Si; nanocrystalline films; semiconductors;
D O I：
10.1002/ppap.200500158
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The polarized Raman spectra of ion-beam synthesized Mg2Si, embedded in (001) and (111) Si substrates were studied. The relative intensities of the F-2g mode measured in several exact scattering configurations are compared with those calculated under the condition for minimum mismatch between the Si and Mg2Si lattices. A conclusion for the orientational growth of the Mg2Si phase in Si is drawn.
引用
收藏
页码：224 / 228
页数：5
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