Single-electron tunneling in magnetic systems

被引：5
|
作者：
Brataas, A
Nazarov, YV
Inoue, J
Bauer, GEW
机构：
[1] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands
[2] DIMES, NL-2628 CJ Delft, Netherlands
[3] Philips Res Labs, NL-5600 JA Eindhoven, Netherlands
[4] Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 46401, Japan
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1999年 / 198-99卷
关键词：
single-electron tunneling; double barrier structures;
D O I：
10.1016/S0304-8853(98)01042-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We discuss the transport properties of small magnetic double barrier structures in terms of the orthodox theory of single-electron tunneling for non-vanishing spin-relaxation times. The magnetoresistance of the system is enhanced for slow spin-relaxation in the island due to reduced mixing of the spin-channels. The spin accumulation can be detected by the long-time transient response, which is dominated by the spin dynamics. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：176 / 178
页数：3
相关论文
共 50 条
  • [41] Single-Electron Tunneling Based Hydrogen Sensor
    Abbasi, H.
    Sedghi, H.
    Khaje, M.
    CHINESE JOURNAL OF PHYSICS, 2015, 53 (07) : 1 - 9
  • [42] SINGLE-ELECTRON TUNNELING THROUGH SEMICONDUCTING NANOSTRUCTURES
    HAUG, RJ
    ELECTROCHIMICA ACTA, 1995, 40 (10) : 1283 - 1292
  • [43] ON THE OBSERVABILITY OF COULOMB BLOCKADE AND SINGLE-ELECTRON TUNNELING
    DEVORET, MH
    ESTEVE, D
    GRABERT, H
    INGOLD, GL
    POTHIER, H
    URBINA, C
    ULTRAMICROSCOPY, 1992, 42 : 22 - 32
  • [44] Resonant tunneling through a single-electron transistor
    Konig, J
    Schoeller, H
    Schon, G
    USPEKHI FIZICHESKIKH NAUK, 1998, 168 (02): : 170 - 175
  • [45] Magnetoasymmetric current fluctuations of single-electron tunneling
    Sanchez, David
    PHYSICAL REVIEW B, 2009, 79 (04):
  • [46] DYNAMICAL CONDUCTIVITY OF SINGLE-ELECTRON RESONANT-TUNNELING SYSTEMS OUT OF EQUILIBRIUM
    VALTCHINOV, V
    IVANOV, T
    WILLE, LT
    SOLID STATE COMMUNICATIONS, 1994, 89 (07) : 637 - 642
  • [47] Dynamics and Dissipation Induced by Single-Electron Tunneling in Carbon Nanotube Nanoelectromechanical Systems
    Ganzhorn, Marc
    Wernsdorfer, Wolfgang
    PHYSICAL REVIEW LETTERS, 2012, 108 (17)
  • [48] Self-assembled single-electron tunneling transistor
    Persson, S.H. Magnus
    Olofsson, Linda
    Gunnarsson, Linda
    Applied Physics Letters, 1999, 74 (17):
  • [49] Arsenic precipitation in GaAs for single-electron tunneling applications
    Hung, CY
    Harris, JS
    Marshall, AF
    Kiehl, RA
    1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 135 - 138
  • [50] Refrigerator based on the Coulomb barrier for single-electron tunneling
    Pekola, Jukka P.
    Koski, Jonne V.
    Averin, Dmitri V.
    PHYSICAL REVIEW B, 2014, 89 (08):
12345