C-Axis oriented crystalline IGZO thin-film transistors by magnetron sputtering

被引：24

作者：

Zhang, Junpeng ^{[1
]}

Wen, Xizhang ^{[1
]}

Hu, Luyao ^{[1
]}

Xu, Wangying ^{[1
]}

Zhu, Deliang ^{[1
]}

Cao, Peijiang ^{[1
]}

Liu, Wenjun ^{[1
]}

Han, Shun ^{[1
]}

Liu, Xinke ^{[1
]}

Jia, Fang ^{[1
]}

Zeng, Yuxiang ^{[1
]}

Lu, Youming ^{[1
]}

机构：

[1] Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Coll Mat Sci & Engn, Shenzhen Key Lab Special Funct Mat, Shenzhen 518060, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2017年 / 5卷 / 09期

基金：

中国国家自然科学基金;

关键词：

ROOM-TEMPERATURE; HIGH-PERFORMANCE; ZNO FILMS; ACTIVATION; PRESSURE; INGAZNO;

D O I：

10.1039/c7tc00193b

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate the direct formation of c-axis oriented crystalline IGZO thin films at room temperature by magnetron sputtering. The influence of processing parameters such as oxygen partial pressure, post-annealing temperature and channel thickness on the electrical performance of IGZO films and thin-film transistors (TFTs) was intensively investigated. The as-deposited crystalline IGZO TFTs exhibited a mobility of 4.49 cm(2) V-1 s(-1) and an on/off ratio of 2.08 x 10(7). For the annealed device, a high mobility of 10.51 cm(2) V-1 s(-1), a subthreshold swing of 0.672 V decade(-1), a threshold voltage of 0.38 V, as well as an on/off current ratio of similar to 10(8) are achieved with an annealing temperature of 400 degrees C. These results present a significant step towards the development of high-performance TFTs using oriented crystalline IGZO.

引用

页码：2388 / 2396

页数：9

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