Domain switching properties in PZN-PT single crystals with engineered domain configurations

被引:5
|
作者
Wada, S [1 ]
Tsurumi, T [1 ]
机构
[1] Tokyo Inst Technol, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528522, Japan
来源
关键词
domain switching; PZN-PT single crystals; engineered domain configuration; polarization vs. E-field behavior; strain vs. E-field behavior; crystallographic anisotropy; spontaneous strain;
D O I
10.4028/www.scientific.net/KEM.214-215.9
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Polarization and strain vs. electric field (E-field) behaviors were measured in rhombohedral 92%Pb(Zn1/3Nb2/3)O-3-8%PbTiO3 (92%PZN-8%PT) single crystals with an E-field applied along [111] and [001] directions. In this study, the model for domain switching behavior was proposed, and using this model, polarization and strain vs. E-field curves were separated into a contribution by 180 degrees domain switching and that by non-180 degrees, i.e., 71 degrees and 109 degrees, domain switching. As a result, it was estimated that for [001] oriented 92%PZN-8%PT crystals, 180 degrees domain reorientation significantly affected its strain vs. E-field behaviors, while for the [111] oriented crystals, non-180 degrees domain reorientation determined its strain vs. E-field behaviors.
引用
收藏
页码:9 / 14
页数:6
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