Potential of Thin (∼10 nm) HfO2 Ferroelectric FDSOI NCFET for Performance Enhancement in Digital Circuits at Reduced Power Consumption

被引：0
|
作者：
Qureshi, S. [1 ]
Mehrotra, Shruti [1 ]
机构：
[1] Indian Inst Technol, Dept Elect Engn, Kanpur, Uttar Pradesh, India
来源：
2018 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2018年
关键词：
Thin HfO2 Ferroelectric; PGP FDSOI NCFET; Power-Delay Product; Performance; MOSFET; SOI;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simulation study using thin (similar to 10 nm) HfO2 PGP FDSOI NCFET based gates is presented. The study has been performed on devices having 20 nm metal gate length with supply voltage varying from 0.5 V to 0.9 V. The circuits studied were 3-stage ring oscillator, NAND-2 and NOR-2 gates. The study showed significant enhancement in the performance in HfO2 FDSOI NCFET based gates at reduced power consumption which is similar to 66% when compared to that of FDSOI MOSFET based gates. The power-delay product of HfO2, FDSOI NCFET based gates was found to be significantly lower (similar to 24%) in comparison to baseline FDSOI MOSFET based gates. The effect of increasing fan-in and fan-out on the performance of logic gates has also been discussed in the paper.
引用
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页码：225 / 228
页数：4
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