Investigation of Statistical Retention of Filamentary Analog RRAM for Neuromophic Computing

被引：0
|
作者：
Zhao, Meiran [1 ]
Wu, Huaqiang [1 ]
Gao, Bin [1 ]
Zhang, Qingtian [1 ]
Wu, Wei [1 ]
Wang, Shan [1 ]
Xi, Yue [1 ]
Wu, Dong [1 ]
Deng, Ning [1 ]
Yu, Shimeng [2 ]
Chen, Hong-Yu [3 ]
Qian, He [1 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing, Peoples R China
[2] Arizona State Univ, Tempe, AZ USA
[3] GigaDevice Semicond Inc, Beijing, Peoples R China
来源：
2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The retention requirements of analog RRAM for neuromorphic computing applications are quite different from conventional RRAM for memory applications. Meanwhile, filamentary analog RRAM exhibits different retention behavior in comparison to strong-filament RRAM. For the first time, the statistical behaviors of read current noise and retention in a 1 Kb filamentary analog RRAM array are investigated in this work. The conductance distribution of different levels is found to change with time, and the physical mechanism of the retention degradation is elucidated. From the experimental data, a compact model is developed in order to predict the statistical conductance evolution, which can effectively evaluate the impact of read noise and retention degradation in neuromorphic computing systems.
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页数：4
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