Luminescence based series resistance mapping of III-V multijunction solar cells

被引：16

作者：

Nesswetter, Helmut ^{[1
,2
]}

Dyck, Wilhelm ^{[1
,2
]}

Lugli, Paolo ^{[2
]}

Bett, Andreas W. ^{[3
]}

Zimmermann, Claus G. ^{[1
]}

机构：

[1] EADS Astrium, Solar Array Ctr, D-81663 Munich, Germany

[2] Tech Univ Munich, Inst Nanoelect, D-80333 Munich, Germany

[3] Fraunhofer Inst Solar Energy Syst ISE, D-79110 Freiburg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 19期

关键词：

ELECTROLUMINESCENCE; OPTIMIZATION;

D O I：

10.1063/1.4831749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method to measure the series resistance of Ga0.5In0.5P/Ga(In)As/Ge triple-junction solar cells spatially resolved is developed, based on luminescence imaging. With the help of network simulations, the dependence of the local series resistance on the external subcell illumination intensities and biasing voltage is predicted and the optimum measurement conditions are clarified. Experimentally, specially prepared test cells with partially irradiated areas are used to verify the capabilities of the method. It is shown that the method is not sensitive to variations of the dark I-V parameters of the subcells. (C) 2013 AIP Publishing LLC.

引用

页数：7

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