In-Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC

被引：13

作者：

Schoner, A. ^{[1
]}

Sugiyama, N. ^{[2
]}

Takeuchi, Y. ^{[2
]}

Malhan, R. K. ^{[2
]}

机构：

[1] Acreo AB, Electrum 236, S-16440 Kista, Sweden

[2] DENSO CORP, Res Labs, Aichi 4700111, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

Embedded epitaxy; normally-off JFET; in-situ doping; a-face doping; Si-face doping; doping uniformity; Aluminum memory effect; TECHNOLOGY;

D O I：

10.4028/www.scientific.net/MSF.600-603.175

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The in-situ doping of aluminum and nitrogen in migration enhanced embedded epitaxy (ME3) is investigated with the aim to apply it to the realization and fabrication of all-epitaxial, normally-off 4H-SiC MET devices. This ME3 process consists of the epitaxial growth of an n-doped channel and a highly p-doped top gate in narrow trenches. We found that the nitrogen doping in the n-channel (a-face) is a factor 1.5 higher than layers grown with the same process on Si-face wafers. Due to the low C/Si ratio and the low silane flow rate used in the ME3 process, the growth of the p-doped top gate needs high flow rates of the aluminum precursor trimethylaluminum for several hours, which contaminates the CVD reactor and causes aluminum memory effects. These aluminum memory effects can be reduced by an extra high temperature bake-out run.

引用

页码：175 / +

页数：2

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