Analytical Modeling of Drain-Source Current Anomalies in ssDNA-SET-A Low Power Nano Device for Future Electronics Applications

被引：1

作者：

Sharma, Vishal ^{[1
]}

Saraf, Vipul ^{[1
]}

机构：

[1] Govt GM Sci Coll, Dept Elect, Jammu 180004, Jammu & Kashmir, India

来源：

JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE | 2013年 / 10卷 / 09期

关键词：

Deoxyribonucleic Acid (DNA); Single Strand DNA (ssDNA); Single Electron Tunneling Transistor (SET); 'V-gs' is Gate Source Voltage; 'V-ds' is Drain Source Voltage; 'I-ds' is Drain Current; COULOMB-BLOCKADE; OSCILLATIONS;

D O I：

10.1166/jctn.2013.3159

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this research paper we have studied mathematically the Drain Source characteristics of single strand DNA(ssDNA)-Single Electron tunneling Transistor (SET) and the effect of random background charge on these characteristics using the "Orthodox" theory of single electron tunneling as applicable in ssDNA-SET. The equations are simulated using 'C' language and results are plotted graphically using Microcal Origin software and it has been observed that Background charge simply sifts the Coulomb blockade regime and thus affect the performance of ssDNA-SET.

引用

页码：1979 / 1983

页数：5

共 14 条

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