Broadband Class-E power amplifier for space radar application

被引：5

作者：

Quach, T ^{[1
]}

Watson, P ^{[1
]}

Okamura, W ^{[1
]}

Kaneshiro, E ^{[1
]}

Gutierrez-Aitken, A ^{[1
]}

Block, T ^{[1
]}

Eldredge, J ^{[1
]}

Jenkins, T ^{[1
]}

Kehias, L ^{[1
]}

Oki, A ^{[1
]}

Sawdai, D ^{[1
]}

Welch, R ^{[1
]}

Worley, R ^{[1
]}

机构：

[1] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA

来源：

GAAS IC SYMPOSIUM, TECHNICAL DIGEST 2001 | 2001年

关键词：

D O I：

10.1109/GAAS.2001.964380

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a broadband high efficiency power amplifier using Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The amplifier demonstrated a record bandwidth for a Class-E power amplifier at X-Band. This circuit achieved 49-58% PAE, 18.5-23.9 dBm output power, and 9.6-10.5 dB gain across 9-11 GHz.

引用

页码：209 / 212

页数：4

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