Switch-on undershoot current observed in thin film transistors

被引：0
|
作者：
Yan, F. [1 ]
Migliorato, P. [1 ]
Rana, V.
Ishihara, R.
机构：
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
来源：
IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005 | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The transient drain current of the single grain silicon TFTs with ECR-PECVD gate oxide has been measured. Switch-on undershoot current has been observed, which can be attributed to the motion of space charge in gate oxide.
引用
收藏
页码：456 / 458
页数：3
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