Subsurface impurities and vacancies in a three-dimensional topological insulator

被引：46

作者：

Black-Schaffer, Annica M. ^{[1
]}

Balatsky, Alexander V. ^{[2
,3
]}

机构：

[1] Uppsala Univ, Dept Phys & Astron, SE-75120 Uppsala, Sweden

[2] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

[3] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 11期

基金：

瑞典研究理事会;

关键词：

SUPERCONDUCTORS; STATES;

D O I：

10.1103/PhysRevB.86.115433

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using a three-dimensional microscopic lattice model of a strong topological insulator (TI) we study potential impurities and vacancies in surface, subsurface, and bulk positions. For all impurity locations we find impurity-induced resonance states with energy proportional to the inverse of the impurity strength, although the impurity strength needed for a low-energy resonance state increases with the depth of the impurity. For strong impurities and vacancies as deep as 15 layers into the material, resonance peaks will appear at and around the Dirac point in the surface energy spectrum, splitting the original Dirac point into two nodes located off-center. Furthermore, we study vacancy clusters buried deep inside the bulk and find zero-energy resonance states for both single and multiple-site vacancies. Only fully symmetric multiple-site vacancy clusters show resonance states expelled from the bulk

引用

页数：6

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