White-light emitting thin-film electroluminescent device using micromachined structure

被引：4
|
作者：
Lee, YH [1 ]
Ju, BK [1 ]
Song, MH [1 ]
Kim, DK [1 ]
Hahn, TS [1 ]
Oh, MH [1 ]
机构：
[1] YEUNGNAM UNIV, DEPT PHYS, KYONGSAN 712749, SOUTH KOREA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 01期
关键词：
D O I：
10.1109/16.554789
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A white-light emitting electroluminescent (EL) device with newly developed ZnS:Pr, Ce, F phosphor layer was fabricated inside a micromachined well having four-sided Si mirrors, prepared by anisotropic wet etching of Si (100) wafer, Highly luminant EL was achieved using the Si micromirrors. Furthermore, the EL device utilizing the metallized mirrors incorporated into the glass substrates also exhibited enhanced brightness when compared to the conventional face-emitting EL device.
引用
收藏
页码：39 / 44
页数：6
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