Birefringence dispersion in fused silica for DUV lithography

被引:15
|
作者
Priestley, R [1 ]
机构
[1] Corning Incorp, Corning, NY 14831 USA
来源
OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2 | 2001年 / 4346卷
关键词
birefringence; dispersion; optical lithography; polarization; synthetic silica glass;
D O I
10.1117/12.435666
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A shift to shorter wavelength radiation sources along with improvements in the quality of lithography grade optical materials has driven the production of integrated circuits with smaller feature sizes. Optical characterization of these materials, in some cases, is performed at visible wavelengths due to the complexity level associated with measuring in the DUV. Birefringence measurements of stepper lens blanks, for example, are typically measured at 633nm using a Helium Neon laser source. However, knowledge of the correlating DUV birefringence values is needed for determining the acceptable magnitude of birefringence in the material and for predicting the magnitude of loss in CD contrast. In this paper we report results on how the birefringence in Coming's HPFS(R) synthetic silica glass changes at the DUV wavelengths used in lithography systems. An examination of the wavelength dependent stress-optic response that produces birefringence was performed and found to increase from 633nm to 193nm. Birefringence in lithography stepper lens elements degrades imaging performance so an understanding of its dispersion is important for system designs.
引用
收藏
页码:1300 / 1305
页数:6
相关论文
共 50 条
  • [31] LITHOGRAPHY MARKET FAVORS DUV TECHNOLOGY
    不详
    ELECTRONICS, 1994, 67 (15): : 4 - 4
  • [32] DUV laser lithography for photomask fabrication
    Jackson, C
    Buck, P
    Cohen, S
    Garg, V
    Howard, C
    Kiefer, R
    Manfredo, J
    Tsou, J
    23RD ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 2003, 5256 : 30 - 41
  • [33] Practical DUV lithography for the optoelectronics market
    Harris, P
    McCallum, M
    Muir, D
    Hughes, G
    Pinkney, S
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVII, PTS 1 AND 2, 2003, 5038 : 910 - 917
  • [34] Optimization of ARC process in DUV lithography
    Shim, KJ
    Choi, BI
    Park, KY
    Lee, WG
    OPTICAL MICROLITHOGRAPHY XI, 1998, 3334 : 692 - 701
  • [35] Fused silica thermal conductivity dispersion at high temperature
    Bouchut, P
    Decruppe, D
    Delrive, L
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (06) : 3221 - 3227
  • [36] INFRARED DISPERSION DUE TO NETWORK VIBRATIONS IN FUSED SILICA
    MILER, M
    PHYSICA STATUS SOLIDI, 1965, 10 (02): : K119 - &
  • [37] In situ diagnostics of pulse laser-induced defects in DUV transparent fused silica glasses
    Mühlig, C
    Triebel, W
    Bark-Zollmann, S
    Grebner, D
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 166 : 698 - 703
  • [38] The exicore DUV birefringence measurement system and its application to measuring lithography grade CaF2 lens blanks
    Wang, BL
    Griffiths, CO
    Rockwell, RR
    List, J
    Mark, D
    OPTICAL DIAGNOSTIC METHODS FOR INORGANIC MATERIALS III, 2003, 5192 : 7 - 18
  • [39] Antireflection subwavelength structures on fused silica fabricated by colloidal microsphere lithography
    Ye, X.
    Huang, J.
    Li, B.
    Geng, F.
    Liu, H. J.
    Wang, F. R.
    Jiang, X. D.
    Wu, W. D.
    Zheng, W. G.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2015, 17 (11-12): : 1689 - 1695
  • [40] Stress induced birefringence tuning in femtosecond laser fabricated waveguides in fused silica
    Fernandes, Luis A.
    Grenier, Jason R.
    Herman, Peter R.
    Aitchison, J. Stewart
    Marques, Paulo V. S.
    OPTICS EXPRESS, 2012, 20 (22): : 24103 - 24114