Tunneling magnetoresistance effect in a few-electron quantum-dot spin valve

被引：10

作者：

Hamaya, K. ^{[1
,2
,3
]}

Kitabatake, M. ^{[1
]}

Shibata, K. ^{[1
]}

Jung, M. ^{[1
]}

Kawamura, M. ^{[1
]}

Ishida, S. ^{[4
]}

Taniyama, T. ^{[3
,5
]}

Hirakawa, K. ^{[1
,2
,6
]}

Arakawa, Y. ^{[1
,2
,4
]}

Machida, T. ^{[1
,2
,6
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Tokyo 1538505, Japan

[3] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

[4] Univ Tokyo, Adv Sci & Technol Res Ctr, Tokyo 1538505, Japan

[5] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

[6] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 22期

关键词：

ground states; III-V semiconductors; indium compounds; magnetoelectronics; nickel; semiconductor quantum dots; spin valves; tunnelling magnetoresistance;

D O I：

10.1063/1.3042098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the tunneling magnetoresistance (TMR) effect through a semiconductor quantum dot (QD) with a few electrons in a lateral QD spin-valve device. At one-to-two electron transition, only inverse TMR effect is observed, where the TMR ratio is relatively large compared with the value based on the Julliere model. When the bias window reaches near the charging energy of the QD, the inverse TMR almost disappears. These features can be interpreted in terms of spin transport via the ground state of a two-electron QD.

引用

页数：3

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