Stochastic plasma charging of nanopatterned dielectric surfaces

被引：0

作者：

Kenney, Jason A. ^{[1
]}

Paek, Eunsu ^{[2
]}

Hwang, Gyeong S. ^{[2
]}

机构：

[1] Appl Mat Inc, Sunnyvale, CA 94085 USA

[2] Univ Texas Austin, Austin, TX 78712 USA

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 2008年 / 36卷 / 04期

关键词：

plasma bombardment; stochastic processes; surface charging;

D O I：

10.1109/TPS.2008.927030

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

A 2-D simulation of the plasma bombardment of high aspect ratio dielectric structures is used to demonstrate stochastic charging behavior arising as absolute dimension decreases from 500 to 50 nm. Statistical analyses are then performed after the system has evolved beyond initial charging to indicate the regions of high variability in potential and to provide representative snapshots of mean and extreme potentials within the structure.

引用

页码：878 / 879

页数：2

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