Formation of high-quality quasi-free-standing bilayer graphene on SiC(0001) by oxygen intercalation upon annealing in air

被引：98

作者：

Oliveira, Myriano H., Jr. ^{[1
]}

Schumann, Timo ^{[1
]}

Fromm, Felix ^{[2
]}

Koch, Roland ^{[2
]}

Ostler, Markus ^{[2
]}

Ramsteiner, Manfred ^{[1
]}

Seyller, Thomas ^{[2
]}

Lopes, Joao Marcelo J. ^{[1
]}

Riechert, Henning ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] Univ Erlangen Nurnberg, Lehrstuhl Tech Phys, D-91058 Erlangen, Germany

来源：

CARBON | 2013年 / 52卷

关键词：

SCALE EPITAXIAL GRAPHENE; RAMAN-SPECTROSCOPY; ELECTRONIC-STRUCTURE; SILICON-CARBIDE; BUFFER LAYER; GRAPHITE; TRANSISTORS; SCATTERING;

D O I：

10.1016/j.carbon.2012.09.008

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on the conversion of epitaxial monolayer graphene on SiC(0001) into decoupled bilayer graphene by performing an annealing step in air. We prove by Raman scattering and photoemission experiments that it has structural and electronic properties that characterize its quasi-free-standing nature. The (6 root 3 x 6 root 3)R30 degrees buffer layer underneath the monolayer graphene loses its covalent bonding to the substrate and is converted into a graphene layer due to the oxidation of the SiC surface. The oxygen reacts with the SiC surface without inducing defects in the topmost carbon layers. The high-quality bilayer graphene obtained after air annealing is p-doped and homogeneous over a large area. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：83 / 89

页数：7

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