The high-density microwave plasma for high rate deposition of microcrystalline silicon

被引：10
|
作者：
Shirai, H
Sakuma, Y
Ueyama, H
机构：
[1] Saitama Univ, Fac Engn, Dept Funct Mat Sci, Urawa, Saitama 3388570, Japan
[2] Nihon Koshuha Co Ltd, Midori Ku, Kanagawa 2260011, Japan
来源：
THIN SOLID FILMS | 1999年 / 345卷 / 01期
关键词：
large-scaled plasma; low electron temperature; high-density plasma; microwave plasma; high rate deposition; mu c-Si : H; SiH4; SiH2Cl2;
D O I：
10.1016/S0040-6090(99)00097-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A high density plasma produced by a microwave discharge (2.45 GHz) utilizing a spokewise antenna is applied for the large-scaled deposition of hydrogenated microcrystalline silicon (mu c-Si:H) film. The plasma maintains a uniform state within +/- 6% over a diameter of 16 cm. The high density plasma, > 10(11) cm(-3) has been sustained with low electron temperatures of 2-2.5 eV in Ar low pressure plasma of several mTorr without magnetic fields. Highly crystallized and photoconductive mu c-Si:H(Cl) film is produced by adding small addition of SiH4 under steady flow of dichlorosilane (SiH2Cl2), H-2 and Ar plasma at high deposition rate of about 20 Angstrom/s. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：7 / 11
页数：5
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