Impact of mask absorber thickness on the focus shift effect in extreme ultraviolet lithography

被引：8

作者：

Cao, Yuting ^{[1
]}

Wang, Xiangzhao ^{[1
]}

Tu, Yuanying ^{[1
]}

Bu, Peng ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Lab Informat Opt & Optoelect Technol, Shanghai 201800, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2012年 / 30卷 / 03期

基金：

美国国家科学基金会;

关键词：

EUVL MASK; ASYMMETRY;

D O I：

10.1116/1.3697718

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A focus shift is a common phenomenon in extreme ultraviolet lithography. It depends on the pattern pitch and has a significant effect on the process window. This work proposes an approximate but analytical method to investigate the focus shift effect using a modified thin mask model and the Hopkins formula of imaging. The source of the focus shift is identified, and the impact of the absorber thickness is discussed. The focus shift effect can be reduced and the process window can be improved by choosing the appropriate absorber thickness. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.3697718]

引用

页数：6

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