Electrical properties of polycrystalline and epitaxially grown PZT thin films

被引:5
|
作者
Tokita, K [1 ]
Aratani, M [1 ]
Ozeki, T [1 ]
Funakubo, H [1 ]
机构
[1] Tokyo Inst Technol, Interdisciplinary Graduated Sch Sci & Engn, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
来源
关键词
PZT; epitaxial; polycrystalline; orientation; dielectric constant; leakage current; remanent polarization;
D O I
10.4028/www.scientific.net/KEM.216.83
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Polycrystalline and epitaxial PZT films with thickness ranging from 30 nm to 350 nm, which have the same (100)-orientation, were prepared by metalorganic chemical vapor deposition (MOCVD). It was confirmed that the epitaxial films had a larger remanent polarization than polycrystalline films. It was also confirmed that the epitaxial films had a lower thickness dependence of the remanent polarization and that the epitaxial films displayed a good hysteresis curve even when the film thickness was less than 100 nm. These experimental data indicate that the crystal quality of the film strongly affects the ferroelectricity of the film.
引用
收藏
页码:83 / 86
页数:4
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