A Comparative Overview of High Power Handling CMOS Switches and their Recent Applications in RF Front Ends

被引：0

作者：

Rascher, Lochen ^{[1
]}

Zohny, Amr ^{[1
]}

Glock, Stefan ^{[1
]}

Fischer, Georg ^{[1
]}

Weigel, Robert ^{[1
]}

Ussmueller, Thomas ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Elect Engn, D-91058 Erlangen, Germany

来源：

2013 IEEE 14TH ANNUAL WIRELESS AND MICROWAVE TECHNOLOGY CONFERENCE (WAMICON) | 2013年

关键词：

RF switch; CMOS; power handling capability; isolation; fully integrated; front end; T/R SWITCH; DESIGN; BAND;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this publication, techniques for high power handling capability of RF switches in bulk CMOS are investigated and compared. These allow reconfigurable power amplifiers (PAs) or radio front ends for Watt level communication standards if combined with approaches for high isolation. Special care is taken to assess the applicability of the solutions for monolithic integration in scaled CMOS processes. Results are shown with power handling capability as high as 34dBm in a 32nm CMOS process. Recent applications for RF switches in front ends or reconfigurable PAs are analyzed. They enable large DC current reduction in back-off with stage bypassing and load adaptation concepts. Up to 50% DC current reduction for low output power is reported. This greatly improves the average PA efficiency for varying envelope signals without the efforts of more sophisticated solutions like envelope tracking.

引用

页数：5

共 50 条

[21] RF Front-Ends Nonlinearity Characterization Using Reflected Power
Martorell, Alexandre
Raoult, Jeremy
Marijon, Robin
Chusseau, Laurent
IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, 2017, 59 (06) : 1925 - 1931
[22] A fully integrated CMOS active bandpass filter for multiband RF front-ends
Gao, Zhiqiang
Ma, Jianguo
Yu, Mingyan
Ye, Yizheng
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2008, 55 (08) : 718 - 722
[23] Recent developments in RF front ends based upon active antenna concepts
Fredrick, JD
Itoh, T
TELSIKS 2001, VOL 1 & 2, PROCEEDINGS, 2001, : 3 - 9
[24] Compact GaN RF-Switches for Power Applications
Driad, Samira
Teyssandier, Charles
Caille, Laurent
Chang, Christophe
Brunel, Laurent
Lambert, Benoit
Stieglauer, Hermann
Brunel, Valeria
2021 16TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2021), 2021, : 378 - 381
[25] Fabrication of high power RF MEMS switches
Wang, L
Cui, Z
Hong, JS
McErlean, EP
Greed, RB
Voyce, DC
MICROELECTRONIC ENGINEERING, 2006, 83 (4-9) : 1418 - 1420
[26] High Power Latching RF MEMS Switches
Bakri-Kassem, Maher
Mansour, Raafat R.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2015, 63 (01) : 222 - 232
[27] Development of high power RF MEMS switches
Hong, JS
Tan, SG
Cui, Z
Wang, L
Greed, RB
Voyce, DC
2004 4TH INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 2004, : P7 - P10
[28] FPGA of Bias-Free Distorters RF Power Amplifiers and Front Ends Design for Computational Intelligence Applications
Lai, Wen-Cheng
Su, Yen-Jung
PROCEEDINGS OF 2016 9TH INTERNATIONAL SYMPOSIUM ON COMPUTATIONAL INTELLIGENCE AND DESIGN (ISCID), VOL 2, 2016, : 252 - 255
[29] FPGA of bias-free distorters RF power amplifiers and front ends design for computational intelligence applications
2016, Institute of Electrical and Electronics Engineers Inc., United States (02):
[30] High density capacitance structures in submicron CMOS for low power RF applications
Sowlati, T
Vathulya, V
Leenaerts, D
ISLPED'01: PROCEEDINGS OF THE 2001 INTERNATIONAL SYMPOSIUM ON LOWPOWER ELECTRONICS AND DESIGN, 2001, : 243 - 246

← 1 2 3 4 5 →