Effects in GaN films grown by MOVPE on GaAs due to the distance of heat source

被引：0
|
作者：
Vilchis, H. [1 ]
Sanchez, V. M. [1 ]
Escobosa, A. [1 ]
机构：
[1] IPN, CINVESTAV, Dept Elect Engn, Mexico City 07738, DF, Mexico
来源：
2008 7TH INTERNATIONAL CARIBBEAN CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS | 2008年
关键词：
gallium nitride films; metalorganic vapor-phase epitaxy; quartz infrared lamps;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We are reporting the results of an investigation about of the effects in gallium nitride films, grown on gallium arsenide (001) substrates by metalorganic vapour-phase epitaxy, due to the distance of the heat source, which is through quartz infrared lamps. The films were characterized using X, ray diffraction (XRD) and photoluminescence (PL). The results suggest that the beat source distance is a very important parameter that influence in the orientation, morphology and luminescence of the gallium nitride films.
引用
收藏
页码：162 / 164
页数：3
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