Etching behavior of GaN/GaAs(001) epilayers grown by MOVPE

被引：0

作者：

Shen, Xiaoming ^{[1
]}

Feng, Zhihong ^{[1
]}

Feng, Gan ^{[1
]}

Fu, Yi ^{[1
]}

Zhang, Baoshun ^{[1
]}

Sun, Yuanping ^{[1
]}

Zhang, Zehong ^{[1
]}

Yang, Hui ^{[1
]}

机构：

[1] Lab. on Integrated Optoelectron., Inst. of Semiconduct., Chinese Acad. of Sci., Beijing 100083, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2002年 / 23卷 / 07期

关键词：

Etching - Metallorganic vapor phase epitaxy - Scanning electron microscopy - Thin films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Wet etching characteristics of cubic GaN (c-GaN) thin films grown on GaAs (001) by metalorganic vapor phase epitaxy (MOVPE) are investigated. The samples are etched in HCl, H3PO4, KOH aqueous solutions, and molten KOH at temperatures in the range of 90-300°C. It is found that different solution produces different etch figure on the surfaces of a sample. KOH-based solutions produce rectangular pits rather than square pits. The etch pits elongate in [11¯0] direction, indicating asymmetric etching behavior in the two orthogonal directions. An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior. In addition, it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c-GaN epilayers.

引用

页码：707 / 712

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