Laterally intermixed quantum structure for carrier confinement in vertical-cavity surface-emitting lasers

被引：6
|
作者：
Sugawara, Y. [1 ]
Miyamoto, T. [1 ]
机构：
[1] Tokyo Inst Technol, Microsyst Res Ctr, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
ELECTRONICS LETTERS | 2009年 / 45卷 / 03期
关键词：
DIFFUSION; WELLS; LAYER;
D O I：
10.1049/el:20093587
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A quantum structure intermixing from the lateral direction of the mesa sidewall is proposed as an improvement method of the performance of vertical-cavity surface-emitting lasers (VCSELs). Threshold current reduction of 70%, a differential quantum efficiency increase of 75% and a two times increase in output power were achieved by suppression of the surface recombination current and by the carrier confinement in the post-type VCSEL.
引用
收藏
页码：167 / 168
页数：2
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