Deep Trenches in LiNbO3: Experimental Demonstration of Modulator Extinction Ratio Enhancement

被引：0

作者：

Pointel, Anne-Laure ^{[1
]}

Ulliac, Gwenn ^{[2
]}

Pawela, Yvan ^{[1
]}

Hauden, Jerome ^{[1
]}

机构：

[1] Photline Technol, Res & Dev, F-25000 Besancon, France

[2] FEMTO ST, UMR CNRS 6174, F-25000 Besancon, France

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2013年 / 25卷 / 15期

关键词：

Integrated optics; microstructure; optical device fabrication; lithium niobate; modulators;

D O I：

10.1109/LPT.2013.2270004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We benefit from the recent progress on lithium niobate deep etching to enhance the extinction ratios of Mach-Zehnder modulators. We demonstrate that a proper trench placed in between parallel arms can lead to a 15 dB- increase without any additional losses at 1550 nm.

引用

页码：1500 / 1502

页数：3

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