Comparisons of the Hot Carrier Effect in Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Reversed Silicon Wafer Direct Bonding

The hot carrier effect. in quasi-silicon-on-insulator (SOI) and conventional SOI power metal-oxide-semiconductor field-effect transistors (MOSFETs) was compared on the basis of experimental results. Device degradation caused by the hot carrier effect in the quasi-SOI power MOSFETs proved to be smaller than in the conventional SOI power MOSFETs because the former can suppress the activation of parasitic bipolar transistors. [DOI: 10.1143/JJAP.47.8739]