Surface structures of femtosecond laser irradiated 4H-SiC crystal

被引：0

作者：

Tomita, T ^{[1
]}

Kinoshita, K ^{[1
]}

Matsuo, S ^{[1
]}

机构：

[1] Univ Tokushima, Tokushima 770, Japan

来源：

2005 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS | 2005年

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Femtosecond laser induced periodic structures are studied in 4H-SiC. The pulse energy and the pulse interval dependence of laser induced structure are observed by scanning electron microscopy. The formation processes of these structures are discussed.

引用

页码：1046 / 1047

页数：2

共 50 条

[1] Femtosecond Laser-Induced Surface Patterning on 4H-SiC
Tomita, Takuro
Kumai, Ryota
Kinoshita, Keita
Matsuo, Shigeki
Hashimto, Shuichi
Nagase, Hirokazu
Nakajima, Makoto
Suemoto, Tohru
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 879 - +
[2] Femtosecond laser surface modification of 4H-SiC improves machinability
Huang, Yuhua
Zhou, Yuqi
Li, Jinming
Zhu, Fulong
APPLIED SURFACE SCIENCE, 2023, 615
[3] Micromachining of 4H-SiC using femtosecond laser
Zhang, Ru
Huang, Chuanzhen
Wang, Jun
Zhu, Hongtao
Yao, Peng
Feng, Shaochuan
CERAMICS INTERNATIONAL, 2018, 44 (15) : 17775 - 17783
[4] Effect of surface roughness on femtosecond laser ablation of 4H-SiC substrates
Chen, Jian-qiang
Xie, Xiao-zhu
Peng, Qing-fa
He, Zi-yu
Hu, Wei
Ren, Qing-lei
Long, Jiang-you
JOURNAL OF CENTRAL SOUTH UNIVERSITY, 2022, 29 (10) : 3294 - 3303
[5] 4H-SiC Surface Modified by a Green Femtosecond Laser at Low Fluence
Liu, Yi-Hsien
Cheng, Chung-Wei
JOURNAL OF LASER MICRO NANOENGINEERING, 2023, 18 (03): : 157 - 160
[6] 4H-SiC Wafer Surfaces Irradiated with Femtosecond Laser at Fluence below the LSFL Threshold
Cheng, Chung-Wei
Li, Yi-En
Liu, Yi-Hsien
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2024, 13 (12)
[7] Large-area regular periodic surface structures on 4H-SiC induced by defocused femtosecond laser
He, Ziyu
Xie, Xiaozhu
Long, Jiangyou
Liu, Tao
Zhang, Zucheng
Lai, Qing
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (09)
[8] Cross-Sectional TEM Analysis of Structural Change in 4H-SiC Single Crystal Irradiated by Femtosecond Laser Pulses
Kawahara, Hiroyuki
Okada, Tatsuya
Kumai, Ryota
Tomita, Takuro
Matsuo, Shigeki
Hashimoto, Shuichi
Yamaguchi, Makoto
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 883 - +
[9] Ferromagnetism in proton irradiated 4H-SiC single crystal
Zhou, Ren-Wei
Liu, Xue-Chao
Wang, Hua-Jie
Chen, Wei-Bin
Li, Fei
Zhuo, Shi-Yi
Shi, Er-Wei
AIP ADVANCES, 2015, 5 (04):
[10] Manipulation of Subwavelength Periodic Structures Formation on 4H-SiC Surface with Three Temporally Delayed Femtosecond Laser Irradiations
He, Wanlin
Zhao, Bo
Yang, Jianjun
Wen, Junqing
Wu, Hua
Guo, Shaoli
Bai, Lihua
NANOMATERIALS, 2022, 12 (05)

← 1 2 3 4 5 →