Electrophoretic displays driven by all-oxide thin-film transistor backplanes fabricated using a solution process

Precursor solutions and a solution process were developed for the fabrication of amorphous oxide thin-film transistors (TFTs). All the layers of the TFTs comprised oxide films prepared from precursor solutions. The gate lines, gate insulator, and channel layer comprised ruthenium oxide, lanthanum zirconium oxide, and zirconium indium zinc oxide films. The polysilazane-based silicon dioxide film was used for the channel stopper layer. The source-line and drain electrode had a double-layer structure comprising indium tin oxide and ruthenium oxide films. The silsesquioxane-based silicon dioxide and ruthenium oxide films were used for the passivation layer and pixel electrodes, respectively. The TFTs exhibited a field effect mobility of 2.68cm(2)V(-1)s(-1), a sub-threshold swing of 1.09V/decade, a threshold voltage of 3.06V, and an on/off ratio of 10(5). Active-matrix electrophoretic displays (EPDs) with a resolution of 101.6ppi were successfully fabricated using the all-solution-processed TFTs. Bi-stable black/white images were confirmed in these TFT-EPDs for the first time.