Calculation of the intrinsic spectral density of current fluctuations in nanometric Schottky-barrier diodes at terahertz frequencies

被引：8

作者：

Mahi, F. Z. ^{[1
]}

Helmaoui, A. ^{[1
]}

Varani, L. ^{[2
]}

Shiktorov, P. ^{[3
]}

Starikov, E. ^{[3
]}

Gruzhinskis, V. ^{[3
]}

机构：

[1] Univ Bechar, Inst Sci & Technol, Bechar 08000, Algeria

[2] Univ Montpellier 2, Inst Elect Sud, CNRS, UMR 5214, F-34095 Montpellier, France

[3] Lithuania Acad Sci, Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

PHYSICA B-CONDENSED MATTER | 2008年 / 403卷 / 19-20期

关键词：

Schottky-barrier diodes; Terahertz radiation; Noise spectral density; High frequency;

D O I：

10.1016/j.physb.2008.07.012

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An analytical model for the noise spectrum of nanometric Schottky-barrier diodes (SBD) is developed. The calculated frequency dependence of the spectral density of current fluctuations exhibits resonances in the terahertz domain which are discussed and analyzed as functions of the length of the diode, free carrier concentration, length of the depletion region and applied voltage. A good agreement obtained with direct Monte Carlo simulations of GaAs SBDs operating from barrier-limited to flat-band conditions fully validates the proposed approach. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：3765 / 3768

页数：4

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