Ultrafast exciton dynamics in ternary II-VI semiconductor quantum wells

被引:3
|
作者
Netti, MC
Gadaleta, C
Del Fatti, N
Vallée, F
Tommasi, R
机构
[1] Univ Bari, Ist Nazl Fis Mat, I-70126 Bari, Italy
[2] Univ Bari, Dipartimento Fis, I-70126 Bari, Italy
[3] CNRS, Ecole Polytech, Opt Quant Lab, F-91128 Palaiseau, France
来源
PHYSICAL REVIEW B | 1999年 / 60卷 / 07期
关键词
D O I
10.1103/PhysRevB.60.4902
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ultrafast exciton dynamics is investigated in a high-quality ZnxCd1-xSe-ZnSe multiple quantum well at low photoexcited carrier density by means of a two-color femtosecond absorption saturation technique. Broadening of the exciton Lines due to carrier photocreation is found to dominate the observed nonlinear response. Measurements performed as a function of the initial energy of the photoexcited carriers show that the dynamics of the induced broadening strongly depends on the carrier distribution, suggesting that Pauli exclusion principle effects significantly influence exciton broadening in ternary quantum-well systems. Localized excitons are shown to modify the picosecond nonlinear response, inducing a frequency shift of the absorption change peak as the system approaches quasiequilibrium. [S0163-1829(99)00331-8].
引用
收藏
页码:4902 / 4906
页数:5
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