Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer

被引：27
|
作者：
Usman, Muhammad [1 ]
Saba, Kiran [1 ]
Han, Dong-Pyo [2 ]
Muhammad, Nazeer [3 ]
机构：
[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Topi 23460, Pakistan
[2] Meijo Univ, Fac Sci & Technol, Tempaku Ku, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan
[3] COMSATS Inst Informat Technol, Dept Math, Wah Cantt 47040, Pakistan
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 113卷
关键词：
QUANTUM-WELLS; POLARIZATION; BARRIER;
D O I：
10.1016/j.spmi.2017.11.046
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
High efficiency of green GaAIInN-based light-emitting diode (LED) has been proposed with peak emission wavelength of similar to 510 nm. By introducing quaternary quantum well (QW) along with the quaternary barrier (QB) and quaternary electron blocking layer (EBL) in a single structure, an efficiency droop reduction of up to 29% has been achieved in comparison to the conventional GaN-based LED. The proposed structure has significantly reduced electrostatic field in the active region. As a result, carrier leakage has been minimized and spontaneous emission rate has been doubled. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：585 / 591
页数：7
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