Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer

被引：27

作者：

Usman, Muhammad ^{[1
]}

Saba, Kiran ^{[1
]}

Han, Dong-Pyo ^{[2
]}

Muhammad, Nazeer ^{[3
]}

机构：

[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Topi 23460, Pakistan

[2] Meijo Univ, Fac Sci & Technol, Tempaku Ku, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan

[3] COMSATS Inst Informat Technol, Dept Math, Wah Cantt 47040, Pakistan

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 113卷

关键词：

QUANTUM-WELLS; POLARIZATION; BARRIER;

D O I：

10.1016/j.spmi.2017.11.046

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

High efficiency of green GaAIInN-based light-emitting diode (LED) has been proposed with peak emission wavelength of similar to 510 nm. By introducing quaternary quantum well (QW) along with the quaternary barrier (QB) and quaternary electron blocking layer (EBL) in a single structure, an efficiency droop reduction of up to 29% has been achieved in comparison to the conventional GaN-based LED. The proposed structure has significantly reduced electrostatic field in the active region. As a result, carrier leakage has been minimized and spontaneous emission rate has been doubled. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：585 / 591

页数：7

共 50 条

[1] Performance Enhancement of Blue Light-Emitting Diodes With an Undoped AlGaN Electron-Blocking Layer in the Active Region
Zhang, Zhuding
Sun, Huiqing
Li, Xuna
Sun, Hao
Zhang, Cheng
Fan, Xuancong
Guo, Zhiyou
JOURNAL OF DISPLAY TECHNOLOGY, 2016, 12 (06): : 573 - 576
[2] Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes
Kim, Hee Jin
Choi, Suk
Kim, Seong-Soo
Ryou, Jae-Hyun
Yoder, P. Douglas
Dupuis, Russell D.
Fischer, Alec M.
Sun, Kewei
Ponce, Fernando A.
APPLIED PHYSICS LETTERS, 2010, 96 (10)
[3] Performance improvement of blue light-emitting diodes with an AlInN/GaN superlattice electron-blocking layer
赵芳
姚光锐
宋晶晶
丁彬彬
熊建勇
苏晨
郑树文
张涛
范广涵
Chinese Physics B, 2013, 22 (05) : 613 - 617
[4] Performance improvement of blue light-emitting diodes with an AlInN/GaN superlattice electron-blocking layer
Zhao Fang
Yao Guang-Rui
Song Jing-Jing
Ding Bin-Bin
Xiong Jian-Yong
Su Chen
Zheng Shu-Wen
Zhang Tao
Fan Guang-Han
CHINESE PHYSICS B, 2013, 22 (05)
[5] Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer
Chen Jun
Fan Guang-Han
Pang-Wei
Zheng Shu-Wen
CHINESE PHYSICS LETTERS, 2011, 28 (12)
[6] Optimizing the PMMA Electron-Blocking Layer of Quantum Dot Light-Emitting Diodes
Zvaigzne, Mariya
Alexandrov, Alexei
Tkach, Anastasia
Lypenko, Dmitriy
Nabiev, Igor
Samokhvalov, Pavel
NANOMATERIALS, 2021, 11 (08)
[7] Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes
Kuo, Yen-Kuang
Chen, Fang-Ming
Chang, Jih-Yuan
Huang, Man-Fang
Liou, Bo-Ting
Shih, Ya-Hsuan
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2020, 56 (01)
[8] Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer
Choi, Suk
Kim, Hee Jin
Kim, Seong-Soo
Liu, Jianping
Kim, Jeomoh
Ryou, Jae-Hyun
Dupuis, Russell D.
Fischer, Alec M.
Ponce, Fernando A.
APPLIED PHYSICS LETTERS, 2010, 96 (22)
[9] Increasing the brightness and efficiency of quantum dot light-emitting diodes by optimizing the PMMA electron-blocking layer
Tkach, A. A.
Alexandrov, A. E.
Saunina, A. Y.
Lypenko, D. A.
Nikitenko, V. R.
Nabiev, I
Samokhvalov, P. S.
NANOPHOTONICS IX, 2022, 12131
[10] Upping the internal quantum efficiency of green light-emitting diodes by employing a graded AlGaN barrier and an electron blocking layer
Usman, Muhammad
Anwar, Abdur-Rehman
Munsif, Munaza
Ullah, Ihsan
IET OPTOELECTRONICS, 2021, 15 (01) : 69 - 74

← 1 2 3 4 5 →