Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation

被引：13

作者：

Rumyantsev, S. L. ^{[1
,2
]}

Fobelets, K. ^{[3
]}

Veksler, D. ^{[1
]}

Hackbarth, T. ^{[4
]}

Shur, M. S. ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[2] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[3] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7 2BT, England

[4] DaimlerChrysler Res Ctr, D-89081 Ulm, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1088/0268-1242/23/10/105001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained-Si modulation doped field effect transistors have been studied as detectors of 0.2 THz and 1.6 THz electromagnetic radiation at room temperature. The difference in the gate voltage dependences for 0.2 THz and 1.6 THz radiation and spatial pattern of the transistor response to focused 1.6 THz radiation confirms that the mechanism of detection is linked to the excitations of the two-dimensional electrons in the device channel.

引用

页数：4

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