Structural investigation of GaInP nanowires using X-ray diffraction

被引:15
|
作者
Kriegner, D. [1 ]
Persson, J. M. [2 ]
Etzelstorfer, T. [1 ]
Jacobsson, D. [3 ,4 ]
Wallentin, J. [3 ,4 ]
Wagner, J. B. [2 ]
Deppert, K. [3 ,4 ]
Borgstrom, M. T. [3 ,4 ]
Stangl, J. [1 ]
机构
[1] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria
[2] Tech Univ Denmark, Ctr Electron Nanoscopy, DK-2800 Lyngby, Denmark
[3] Lund Univ, SE-22100 Lund, Sweden
[4] Lund Univ, Nanometer Struct Consortium, SE-22100 Lund, Sweden
基金
奥地利科学基金会;
关键词
Nanowires; X-ray diffraction; III-V semiconductors; SOLAR-CELLS; ABSORPTION; LIGHT; INAS;
D O I
10.1016/j.tsf.2013.02.112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work the structure of ternary GaxIn1-xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal-organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10 mu m are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:100 / 105
页数:6
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