Low Power Balun Design for 1.575 GHz in 90 nm CMOS Technology

被引：0

作者：

Gradzki, Jacek ^{[1
]}

机构：

[1] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland

来源：

2012 IEEE 15TH INTERNATIONAL SYMPOSIUM ON DESIGN AND DIAGNOSTICS OF ELECTRONIC CIRCUITS & SYSTEMS (DDECS) | 2012年

关键词：

Balun; phase splitter; low power; RFIC; GPS; CMOS; UMC; 90; nm;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper low power balun design is presented. It is optimized for 1.575 GHz and designed in 90 nm UMC CMOS technology. Current consumption is only 0.44 mA under 1.2 V supply voltage. The simulation shows that gain and phase imbalance are equal to 0.08 dB and 0.045 degrees, respectively. Single-ended power gain of this circuit is 2.2 dB. A special dimension matching has been made to minimize circuit susceptibility to variation of the manufacturing process.

引用

页码：250 / 253

页数：4

共 50 条

[11] IC design of low power, wide tuning range VCO in 90 nm CMOS technology
李竹
王志功
李智群
李芹
刘法恩
Journal of Semiconductors, 2014, (12) : 137 - 142
[12] Low Power FPAA Design Based on OTA Using 90nm CMOS technology
Mahmoud, Soliman
Ali, Kareem
Rabea, Mahmoud
Amgad, Abdallah
Adel, Ahmed
Nasser, Ahmed
Mohamed, Hussien
Ismail, Yehea
2011 INTERNATIONAL CONFERENCE ON ENERGY AWARE COMPUTING, 2011,
[13] IC design of low power, wide tuning range VCO in 90 nm CMOS technology
Li Zhu
Wang Zhigong
Li Zhiqun
Li Qin
Liu Faen
JOURNAL OF SEMICONDUCTORS, 2014, 35 (12)
[14] IC design of low power, wide tuning range VCO in 90 nm CMOS technology
李竹
王志功
李智群
李芹
刘法恩
Journal of Semiconductors, 2014, 35 (12) : 137 - 142
[15] A low power 20 GHz comparator in 90 nm COMS technology
唐凯
孟桥
王志功
郭婷
Journal of Semiconductors, 2014, (05) : 78 - 83
[16] A low power 20 GHz comparator in 90 nm COMS technology
唐凯
孟桥
王志功
郭婷
Journal of Semiconductors, 2014, 35 (05) : 78 - 83
[17] A low power 20 GHz comparator in 90 nm COMS technology
Tang Kai
Meng Qiao
Wang Zhigong
Guo Ting
JOURNAL OF SEMICONDUCTORS, 2014, 35 (05)
[18] A low-power 6.3 GHz FBAR overtone-based oscillator in 90 nm CMOS technology
ElBarkouky, Mohamed
Wambacq, Piet
Rolain, Yves
2007 PH.D RESEARCH IN MICROELECTRONICS AND ELECTRONICS, 2007, : 61 - +
[19] Design of a Low Noise, Low Power 3.05-3.45 GHz Digitally Controlled Oscillator in 90 nm CMOS
Thiel, Bjoern Thorsten
Neyer, Andreas
Heinen, Stefan
PRIME: PROCEEDINGS OF THE CONFERENCE 2009 PHD RESEARCH IN MICROELECTRONICS AND ELECTRONICS, 2009, : 228 - +
[20] Design of a low power 60GHz OOK receiver in 65nm CMOS technology
Lu, Zhenghao
Feng, Chen
Yu, Xiaopeng
Qin, Yajie
Yeo, Kiat Seng
PROCEEDINGS OF THE 2012 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2012, : 22 - 24

← 1 2 3 4 5 →