Experimental Evidence of Multiple Diffusion Mechanisms in Thin-Film Cu(In, Ga)Se2

被引：6
|
作者：
Biderman, N. J. [1 ,2 ]
Novak, Steven W. [1 ,2 ]
Laursen, T. [1 ,2 ]
Sundaramoorthy, R. [1 ,2 ]
Haldar, Pradeep [1 ,2 ]
Lloyd, J. R. [1 ,2 ]
机构：
[1] SUNY Albany, Coll Nanoscale Sci, Polytech Inst, Albany, NY 12203 USA
[2] SUNY Albany, Coll Engn, Polytech Inst, Albany, NY 12203 USA
来源：
IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 05期
关键词：
Activation energy; cadmium; diffusion processes; grain boundaries; grain size; photovoltaic cells; thin films; GRAIN-BOUNDARY; SIMS; CU;
D O I：
10.1109/JPHOTOV.2015.2459911
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Lattice and grain boundary diffusions of cadmium in copper indium gallium diselenide (Cu(In, Ga)Se-2 or CIGS) thin films were investigated by annealing cadmium into samples of 700-nm CIGS thickness at temperatures between 250 and 300 degrees C. Diffusion profiles of cadmium were analyzed by dual-beam time-of-flight secondary ion mass spectroscopy (TOF-SIMS). In addition to fast cadmium grain boundary diffusion, experiments revealed cadmium diffusion profiles with two distinct lattice diffusion stages, which could be indicative of simultaneous vacancy and dissociative diffusion mechanisms.
引用
收藏
页码：1497 / 1502
页数：6
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