A 140 GHz Transmitter with an Integrated Chip-to-Waveguide Transition using 130nm SiGe BiCMOS Process

被引：0
|
作者：
He, Zhongxia Simon [1 ]
Bao, Mingquan [2 ]
Li, Yinggang [2 ]
Hassona, Ahmed [1 ]
Campion, James [3 ]
Oberhammer, Joachim [3 ]
Zirath, Herbert [1 ,2 ]
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Microwave Elect Lab, S-41296 Gothenburg, Sweden
[2] Ericsson Res, Stockholm, Sweden
[3] KTH Royal Inst Technol, Dept Micro & Nanosyst, Stockholm, Sweden
来源：
2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC) | 2018年
基金：
欧盟地平线“2020”;
关键词：
D-band; transmitter chipset; mixer; SiGe BiCMOS; chip-to-waveguide transition;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology with f(t)/f(max) values of 250 GHz/ 370 GHz. This design comprises of a frequency sixtupler, a balanced transconductance mixer, an amplifier and chip-to-waveguide transition. The frequency multiplier operates in wide frequency band from 110-147 GHz, while the amplifier operates between 115-155 GHz. The total DC power consumption of the chipset is 420 mW. The chip size is 3 mm x 0.73 mm including chip-to-waveguide transition. The transmitter gives -4 dBm output power at 140 GHz and can operate between 129-148 GHz. Wireless data transmission up to 6 Gbps is measured using PSK and QAM modulation schemes.
引用
收藏
页码：28 / 30
页数：3
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