The composition dependence of the structural, magnetic, and transport properties of epitaxially grown Mn-Co-Ga films were investigated. The crystal structure was observed to change from tetragonal to cubic as the Co content was increased. In terms of the dependence of saturation magnetization on the Co content, relatively small value was obtained for the Mn2.3Co0.4Ga1.3 film at a large K-u value of 9.2 Merg/cm(3). Electrical resistivity of Mn-Co-Ga films was larger than that of pure Mn-Ga film. The maximum value of the resistivity was 490 mu Omega cm for Mn2.2Co0.6Ga1.2 film. The high resistivity of Mn-Co-Ga might be due to the presence of localized electron states in the films due to chemical disordering caused by the Co substitution. (C) 2013 American Institute of Physics.
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Tokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
Miura, Jun
Nakajima, Takashi
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Tokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
Nakajima, Takashi
Naganuma, Hiroshi
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Tokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, JapanTokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
Naganuma, Hiroshi
Okamura, Soichiro
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Tokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
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Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South KoreaYonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea
Ham, MH
Yoon, S
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机构:Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea
Yoon, S
Park, Y
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机构:Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea
Park, Y
Myoung, JM
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机构:Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea