High-power 2.8 W blue-violet laser diode for white light sources

被引：16
|
作者：
Hashimoto, Rei [1 ]
Hung, Hung [1 ]
Hwang, Jongil [1 ]
Saito, Shinji [1 ]
Nunoue, Shinya [1 ]
机构：
[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Kawasaki, Kanagawa 2128582, Japan
来源：
OPTICAL REVIEW | 2012年 / 19卷 / 06期
关键词：
blue-violet laser; InGaN; laser diode excitation white light source; facet coating; AlN/SiN/SiO2; reliability;
D O I：
10.1007/s10043-012-0068-9
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
High-power 2.8 W blue-violet InGaN LD was fabricated, applying AlN facet coating technology. The AlN was found to be crystallized on the facets and very stable even after 2200 h cw operation. Luminous flux over 380 lm is obtained with a phosphor-converted LD excitation white light source using just a single laser chip at 1A operating current.
引用
收藏
页码：412 / 414
页数：3
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