Optical properties of excitons in metal-insulator-semiconductor nanowires

被引:6
|
作者
Yan, Jie-Yun [1 ,2 ]
机构
[1] Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China
[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
来源
OPTICS EXPRESS | 2013年 / 21卷 / 21期
基金
中国国家自然科学基金;
关键词
PLASMON INTERACTION; QUANTUM-DOT; HYBRID EXCITONS; PHOTOLUMINESCENCE; MODES; LIGHT;
D O I
10.1364/OE.21.025607
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The theoretical model for the metal-insulator-semiconductor nanowires is established and the optical properties are investigated. The linear absorption of the hybrid excitons, formed due to the exciton-plasmon interaction, shows obvious red shift on the magnitude of several meVs. The mechanism of the red shift is found to be the joint action of the increased excitonic binding energy attributed to the indirect Coulomb interaction and the decreased effective bandgap caused by the additional self-energy potential. The conclusion is also supported by the evolution of the absorption spectra with the adjustable structural parameters. (C) 2013 Optical Society of America
引用
收藏
页码:25607 / 25618
页数:12
相关论文
共 50 条
  • [21] METAL-INSULATOR-SEMICONDUCTOR CAPACITORS WITH BISMUTH OXIDE AS INSULATOR
    RAJU, TA
    TALWAI, AS
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4877 - 4878
  • [22] OPTICAL-PROPERTIES OF PURE CDS AND METAL-INSULATOR-SEMICONDUCTOR STRUCTURES ON CDS AT ELECTRICAL OPERATION
    JAKOBSON, MA
    KAGAN, VD
    SEISYAN, RP
    GONCHAROVA, EV
    JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 225 - 230
  • [23] REVERSIBLE OPTICAL MEMORY ON BASIS OF METAL-INSULATOR-SEMICONDUCTOR MULTILAYER STRUCTURE
    KOROBOV, IV
    PLOTNIKOV, AF
    POPOV, YM
    SELEZNEV, VN
    KVANTOVAYA ELEKTRONIKA, 1975, 2 (09): : 2013 - 2018
  • [24] PROPERTIES OF METAL-SEMICONDUCTOR AND METAL-INSULATOR-SEMICONDUCTOR JUNCTIONS ON CDTE SINGLE-CRYSTALS
    WANG, FF
    FAHRENBRUCH, AL
    BUBE, RH
    CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 1635 - 1640
  • [25] Optical properties of excitons in semiconductor (InP)-insulator quantum wires
    V. S. Dneprovskii
    E. A. Zhukov
    N. Yu. Markova
    E. A. Mulyarov
    K. A. Chernoutsan
    O. A. Shalygina
    Physics of the Solid State, 2000, 42 : 544 - 547
  • [26] Optical properties of excitons in semiconductor (InP)-insulator quantum wires
    Dneprovskii, VS
    Zhukov, EA
    Markova, NY
    Mulyarov, EA
    Chernoutsan, KA
    Shalygina, OA
    PHYSICS OF THE SOLID STATE, 2000, 42 (03) : 544 - 547
  • [27] PROPERTIES OF METAL-SEMICONDUCTOR AND METAL-INSULATOR-SEMICONDUCTOR JUNCTIONS ON CDTE SINGLE-CRYSTALS
    WANG, FF
    FAHRENBRUCH, AL
    BUBE, RH
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) : 3552 - 3559
  • [28] Electrical Properties of Metal-Insulator-Semiconductor Capacitors on Freestanding GaN Substrate
    Kim, Eunhee
    Soejima, Narumasa
    Watanabe, Yukihiko
    Ishiko, Masayasu
    Kachi, Tetsu
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
  • [29] Characterization of polymeric metal-insulator-semiconductor diodes
    Grecu, S
    Bronner, M
    Opitz, A
    Brütting, W
    SYNTHETIC METALS, 2004, 146 (03) : 359 - 363
  • [30] A Dopingless FET With Metal-Insulator-Semiconductor Contacts
    Kao, Kuo-Hsing
    Chen, Liang-Yu
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (01) : 5 - 8