High-Speed Plasmonic-Conductive Oxide-Silicon Modulator by Epsilon-near-zero Electro-Absorption

被引：0
|
作者：
Zhou, Bokun [1 ]
Li, Erwen [1 ]
Bo, Yunfei [1 ]
Wang, Alan X. [1 ]
机构：
[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA
来源：
2019 IEEE 16TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2019) | 2019年
关键词：
ULTRA-COMPACT;
D O I：
10.1109/group4.2019.8853913
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We designed and demonstrated a high-speed plasmonic-conductive oxide-silicon modulator using epsilon-near-zero electro-absorption, achieving modulation bandwidth of 3.5GHz and 4.56b/s data rate. The electro-absorption modulator covers the entire C-band from 1515 nm to 1580 nm wavelength.
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页数：2
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