High-Speed Plasmonic-Conductive Oxide-Silicon Modulator by Epsilon-near-zero Electro-Absorption

被引：0
|
作者：
Zhou, Bokun [1 ]
Li, Erwen [1 ]
Bo, Yunfei [1 ]
Wang, Alan X. [1 ]
机构：
[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA
来源：
2019 IEEE 16TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2019) | 2019年
关键词：
ULTRA-COMPACT;
D O I：
10.1109/group4.2019.8853913
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We designed and demonstrated a high-speed plasmonic-conductive oxide-silicon modulator using epsilon-near-zero electro-absorption, achieving modulation bandwidth of 3.5GHz and 4.56b/s data rate. The electro-absorption modulator covers the entire C-band from 1515 nm to 1580 nm wavelength.
引用
收藏
页数：2
相关论文
共 50 条
  • [1] High-Speed Plasmonic-Silicon Modulator Driven by Epsilon-Near-zero Conductive Oxide
    Zhou, Bokun
    Li, Erwen
    Bo, Yunfei
    Wang, Alan X.
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2020, 38 (13) : 3338 - 3345
  • [2] High-Speed Broadband Plasmonic-Silicon Modulator Integrated with Epsilon-near-zero Conductive Oxide
    Zhou, Bokun
    Li, Erwen
    Bo, Yunfei
    Hsu, Wei-Che
    Wang, Alan X.
    2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2020,
  • [3] Ultra-compact and broadband electro-absorption modulator using an epsilon-near-zero conductive oxide
    QIAN GAO
    ERWEN LI
    ALAN X.WANG
    Photonics Research, 2018, (04) : 277 - 281
  • [4] Ultra-compact and broadband electro-absorption modulator using an epsilon-near-zero conductive oxide
    QIAN GAO
    ERWEN LI
    ALAN X.WANG
    Photonics Research, 2018, 6 (04) : 277 - 281
  • [5] Ultra-compact and broadband electro-absorption modulator using an epsilon-near-zero conductive oxide
    Gao, Qian
    Li, Erwen
    Wang, Alan X.
    PHOTONICS RESEARCH, 2018, 6 (04) : 277 - 281
  • [6] High-speed polymer-buried electro-absorption modulator based on indium-tin-oxide epsilon-near-zero material
    Das, Himanshu R.
    Mondal, Haraprasad
    OPTICAL ENGINEERING, 2025, 64 (01)
  • [7] High-speed hybrid plasmonic electro-optical absorption modulator exploiting epsilon-near-zero effect in indium-tin-oxide
    Abdelatty, Mohamed Y.
    Badr, Mohamed M.
    Swillam, Mohamed A.
    JOURNAL OF NANOPHOTONICS, 2018, 12 (03)
  • [8] Electro-absorption Modulator with Dual Carrier Accumulation Layers Based on Epsilon-Near-Zero ITO
    Lin Jin
    Qin Chen
    Wanwan Liu
    Shichao Song
    Plasmonics, 2016, 11 : 1087 - 1092
  • [9] Electro-absorption Modulator with Dual Carrier Accumulation Layers Based on Epsilon-Near-Zero ITO
    Jin, Lin
    Chen, Qin
    Liu, Wanwan
    Song, Shichao
    PLASMONICS, 2016, 11 (04) : 1087 - 1092
  • [10] Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide
    Jin, Lin
    Wen, Long
    Liang, Li
    Chen, Qin
    Sun, Yunfei
    NANOSCALE RESEARCH LETTERS, 2018, 13
12345