Hole mobility and device characteristics of SiGe dual channel structure

被引：6
|
作者：
Jung, Jongwan [1 ]
机构：
[1] Sejong Univ, Dept Nano Sci & Technol, Seoul 143747, South Korea
来源：
CURRENT APPLIED PHYSICS | 2009年 / 9卷
关键词：
SiGe; Silicon germanium; Mobility; Ge concentration; Biaxial strain; P-TYPE; ELECTRON-MOBILITY; SI1-YGEY;
D O I：
10.1016/j.cap.2008.08.020
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hole mobility and current-voltage characteristics of p-type MOS transistors with dual channel are examined. High hole mobility needs high Ge compositions in channels (higher than 60% Ge). Besides, hole mobility in alloy channels does not seem much degraded by alloy scattering. Even though high hole mobility could be easily obtained for dual channels with higher than 60% Ge, junction leakage and subthreshold characteristics are severely worsened. These results indicate that there should be a tradeoff between mobility enhancement and the threshold characteristics of p-type MOS transistors for adopting the SiGe dual channel with high Ge composition. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：S47 / S50
页数：4
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