Electrical characterization of the SiON/Si interface for applications on optical and MOS devices

An investigation of the electrical properties of the SiON/n-Si interface is presented for applications in MOS and/or optical devices. The SiON films were deposited onto n-type Si substrates by CVD using different [O]/[N] ratios. Subsequent metallization led to the creation of metal-oxide-semiconductor (MOS) devices and electrical characterization took place in order to identify their electrical properties. Electrical measurements included current-voltage, capacitance-conductance-voltage (C-G-V) measurements and admittance spectroscopy, allowing the determination of the interface state density, the traps time constant and their distribution. Post-deposition annealing was also used and the annealed samples were subjected to the same investigation. The interface state density was found to lie between 1.74 x 10(12) eV(-1) cm(2) and 1.72 x 10(11) eV(-1) cm(-2) and the post-deposition annealing reduced these values.