The random-access memory accounting machine - II. The magnetic-disk, random-access memory (Reprinted from IBM Journal of Research and Development, vol 1, 1957)

被引：1
|
作者：
Noyes, T
Dickinson, WE
机构：
[1] IBM, San Jose, CA
来源：
IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 2000年 / 44卷 / 1-2期
关键词：
D O I：
10.1147/rd.441.0016
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The IBM Type 350 magnetic disk, RAM used in the RAM accounting machine (RAMAC) system is a large-capacity storage device with relatively rapid access to any record. The information is stored magnetically on fifty rotating disks. The disks are chosen for the recording medium because they have a good volumetric efficiency for surface storage. Magnetic recording is chosen because of both its permanence and ease of modification, while it still allows good storage density.
引用
收藏
页码：16 / 19
页数：4
相关论文
共 50 条
  • [41] Design and development of MoS2 based low-power random-access memory devices
    Arun, N.
    Kapoor, Sakshi
    Singh, J. P.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 188
  • [42] APPLYING 1 NANOSECOND STROBOSCOPIC VOLTAGE CONTRAST WITH AN ENERGY ANALYZER TO DYNAMIC RANDOM-ACCESS MEMORY MEASUREMENTS
    BURGHARD, RA
    BRABENAC, CJ
    WARD, CM
    SCANNING ELECTRON MICROSCOPY, 1983, : 1611 - 1618
  • [43] Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches
    Seo, Yeongkyo
    Fong, Xuanyao
    Kwon, Kon-Woo
    Roy, Kaushik
    IEEE MAGNETICS LETTERS, 2015, 6
  • [44] Demonstration of Ultralow Bit Error Rates for Spin-Torque Magnetic Random-Access Memory With Perpendicular Magnetic Anisotropy
    Nowak, J. J.
    Robertazzi, R. P.
    Sun, J. Z.
    Hu, G.
    Abraham, David W.
    Trouilloud, P. L.
    Brown, S.
    Gaidis, M. C.
    O'Sullivan, E. J.
    Gallagher, W. J.
    Worledge, D. C.
    IEEE MAGNETICS LETTERS, 2011, 2
  • [45] Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory
    Nowak, Janusz J.
    Robertazzi, Ray P.
    Sun, Jonathan Z.
    Hu, Guohan
    Park, Jeong-Heon
    Lee, JungHyuk
    Annunziata, Anthony J.
    Lauer, Gen P.
    Kothandaraman, Raman
    O'Sullivan, Eugene J.
    Trouilloud, Philip L.
    Kim, Younghyun
    Worledge, Daniel C.
    IEEE MAGNETICS LETTERS, 2016, 7
  • [46] Perpendicular Magnetized Magnetic Random-Access Memory Cells Utilizing the Precessional Spin-Current Structure: Benefits for Modern Memory Applications
    Wolf, Georg
    Kardasz, Bartek
    Vasquez, Jorge
    Boone, Thomas
    Bozdag, Deniz
    Watts, Steve
    Hernandez, Jacob
    Manandhar, Pradeep
    Chin, Yuan-Tung
    Pinarbasi, Mustafa
    IEEE MAGNETICS LETTERS, 2020, 11
  • [47] Hybrid Memory Layer With Low Curie Temperature CoPd/Pd Multilayer for High-Density Magnetic Random-Access Memory Cells
    Zhao, W.
    Dong, X.
    Kimura, T.
    Kato, T.
    Oshima, D.
    Sonobe, Y.
    Kawato, Y.
    Iwata, S.
    IEEE TRANSACTIONS ON MAGNETICS, 2018, 54 (11)
  • [48] Perpendicular Magnetized Magnetic Random-Access Memory Cells Utilizing the Precessional Spin-Current Structure: Benefits for Modern Memory Applications
    Wolf, Georg
    Kardasz, Bartek
    Vasquez, Jorge
    Boone, Thomas
    Bozdag, Deniz
    Watts, Steve
    Hernandez, Jacob
    Manandhar, Pradeep
    Chin, Yuan-Tung
    Pinarbasi, Mustafa
    Pinarbasi, Mustafa (pinarbasi@spinmemory.com), 1600, Institute of Electrical and Electronics Engineers Inc., United States (11):
  • [49] CLOCK TIMER .1. RANDOM-ACCESS MEMORY STORES 16 ALARM TIMES OVER 7 DAYS
    CLEMOW, RD
    GARDEN, TC
    WIRELESS WORLD, 1980, 86 (1530): : 77 - 80
  • [50] High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory
    Kena Zhang
    Jianjun Wang
    Yuhui Huang
    Long-Qing Chen
    P. Ganesh
    Ye Cao
    npj Computational Materials, 6
12345