Self-gating in Nanoelectronic junctions

被引：0
|
作者：
Worschech, L. [1 ]
Hartmann, D. [1 ]
Reitzenstein, S. [1 ]
Forchel, A. [1 ]
机构：
[1] Univ Wurzburg, Tech Phys, Am Hubland, D-79074 Wurzburg, Germany
来源：
2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Self-gating induced switching in low dimensional branched channels is reported. The selfgating can be utilized for the realization of compact switches, adders and logic gates based on monolithic junctions.
引用
收藏
页码：432 / +
页数：2
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