Packaged single-ended CMOS low noise amplifier with 2.3 dB noise figure and 64dBm IIP2

被引：2
|
作者：
Li, Z [1 ]
O, KK [1 ]
机构：
[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
来源：
ELECTRONICS LETTERS | 2004年 / 40卷 / 12期
关键词：
D O I：
10.1049/el:20040459
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A single-ended low noise amplifier (LNA) implemented in a foundry 0.18 mum CMOS process is tested on a PC board using the chip-on-board technique. The measured S-11 and S-22 are less than -10 dB over 5.15-5.35 GHz, which is the lower subband of UNII and HIPERLAN/2 band. The measured noise figure is 2.0 dB and power gain is 15.5 dB at 5.15 GHz, while drawing 5.8 mA of current from a 1.8 V supply The measured IIP2 is greater than 64 dBm. This extremely high IP2 is due to the tuned response of the LNA. The LNA is suitable for WLAN applications in the lower UNII and HIPERLAN/2 subband.
引用
收藏
页码：712 / 713
页数：2
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