Computational study on fluorine atom reaction with silane molecule (SiH4)

被引:5
|
作者
Yu, Angyang [1 ]
机构
[1] Jilin Univ, Inst Theoret Chem, State Key Lab Theoret & Computat Chem, Changchun 130023, Peoples R China
关键词
Silane; Reaction mechanism; Direct dynamics; Hydrogen abstraction; Rate constants; TRANSITION-STATE THEORY; RATE CONSTANTS; HYDROGEN ABSTRACTION; CROSS-SECTION; DYNAMICS; CHEMILUMINESCENCE; SCATTERING; REDUCTION; SILICON; BEAM;
D O I
10.1007/s13738-013-0350-1
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The fluorine atom's reaction with silane molecule (SiH4) is investigated in this work. Two reaction channels which form SiH3+HF and SiH3F+H are discussed in the microscopic level. The analyses of transition states show that the SiH3+HF channel proceeds through a direct hydrogen abstract mechanism and the SiH3F+H channel could take place via the substitution mechanism. The energetic information of the potential energy surface has been obtained using high-level ab initio molecular orbital theory. A dual-level direct dynamics method is employed to calculate the rate constants of the title reaction. The rate constants of the hydrogen abstraction channel are much larger than the substitution channel. The calculated rate constants are in best agreement with available experimental result.
引用
收藏
页码:593 / 598
页数:6
相关论文
共 50 条
  • [21] CHEMIIONIZATION AND CHEMILUMINESCENCE IN THE REACTION OF SIH4 WITH ACTIVE NITROGEN
    HORIE, O
    POTZINGER, P
    REIMANN, B
    CHEMICAL PHYSICS LETTERS, 1986, 129 (03) : 231 - 236
  • [22] THE SILANE ISOTOPOMERS (SIH4)-SI-29 AND (SIH4)-SI-30 CONSTANTS OF THE V2/V4 DYAD
    PRINZ, H
    KREINER, WA
    PIERRE, G
    CANADIAN JOURNAL OF PHYSICS, 1990, 68 (7-8) : 551 - 562
  • [23] OBSERVATION OF 2ND-ORDER STARK EFFECTS IN SILANE, SIH4
    KREINER, WA
    OKA, T
    ROBIETTE, AG
    JOURNAL OF CHEMICAL PHYSICS, 1978, 68 (07): : 3236 - 3243
  • [24] Formation of Higher Silanes in Low-Temperature Silane (SiH4) Ices
    Tarczay, Gyoegy
    Foestel, Marko
    Maksyutenko, Pavlo
    Kaiser, Ralf I.
    INORGANIC CHEMISTRY, 2016, 55 (17) : 8776 - 8785
  • [25] Control of higher-silane generation by dilution gases in SiH4 plasmas
    Zhang, Bin
    Zhang, Xiaobing
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 2020, 29 (09):
  • [26] ELECTRONIC EXCITATION OF SILANE (SIH4) BY LOW-ENERGY-ELECTRON IMPACT
    WINSTEAD, C
    PRITCHARD, HP
    MCKOY, V
    JOURNAL OF CHEMICAL PHYSICS, 1994, 101 (01): : 338 - 342
  • [28] Quantum chemical study of reaction path for NH(a(1)Delta) with SiH4
    Tachibana, A
    Yano, T
    APPLIED SURFACE SCIENCE, 1997, 117 : 158 - 165
  • [29] KINETIC AND THERMOCHEMICAL STUDY OF THE SIH3 + HBR REVERSIBLE SIH4 + BR AND SIH3 + HI REVERSIBLE SIH4 + I EQUILIBRIA
    SEETULA, JA
    FENG, Y
    GUTMAN, D
    SEAKINS, PW
    PILLING, MJ
    JOURNAL OF PHYSICAL CHEMISTRY, 1991, 95 (04): : 1658 - 1664
  • [30] AN FTIR STUDY OF THE KINETICS AND MECHANISM FOR THE CL-ATOM-INITIATED AND BR-ATOM-INITIATED OXIDATION OF SIH4
    NIKI, H
    MAKER, PD
    SAVAGE, CM
    BREITENBACH, LP
    JOURNAL OF PHYSICAL CHEMISTRY, 1985, 89 (09): : 1752 - 1755